IRF7495TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

260

Vgs(th) (Max) @ Id :

4V @ 250µA

JESD-609 Code :

e3

FET Type :

N-Channel

Resistance :

22mOhm

Continuous Drain Current (ID) :

7.3A

Gate to Source Voltage (Vgs) :

20V

Threshold Voltage :

4V

Turn On Delay Time :

8.7 ns

Time@Peak Reflow Temperature-Max (s) :

30

Packaging :

Tape and Reel (TR)

Dual Supply Voltage :

100V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Number of Elements :

1

Length :

4.9784mm

Published :

2004

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Dual

Width :

3.9878mm

Lead Free :

Contains Lead, Lead Free

Number of Pins :

8

Terminal Form :

Gull wing

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

1530pF @ 25V

Height :

1.4986mm

Drain to Source Breakdown Voltage :

100V

Factory Lead Time :

12 Weeks

REACH SVHC :

No SVHC

Rds On (Max) @ Id, Vgs :

22m Ω @ 4.4A, 10V

Mount :

Surface Mount

Nominal Vgs :

4 V

Vgs (Max) :

±20V

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

7.3A Ta

Fall Time (Typ) :

36 ns

Power Dissipation-Max :

2.5W Ta

Operating Temperature :

-55°C~150°C TJ

ECCN Code :

EAR99

Power Dissipation :

2.5W

Radiation Hardening :

No

Termination :

SMD/SMT

Rise Time :

13ns

Number of Terminations :

8

Transistor Element Material :

SILICON

Terminal Finish :

Matte Tin (Sn)

Transistor Application :

SWITCHING

Element Configuration :

Single

Gate Charge (Qg) (Max) @ Vgs :

51nC @ 10V

Current Rating :

7.3A

Voltage - Rated DC :

100V

Turn-Off Delay Time :

10 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

RoHS Status :

ROHS3 Compliant

Series :

HEXFET®