IRF7495PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

22m Ω @ 4.4A, 10V

Surface Mount :

yes

Pulsed Drain Current-Max (IDM) :

58A

Operating Mode :

ENHANCEMENT MODE

Avalanche Energy Rating (Eas) :

180 mJ

JEDEC-95 Code :

MS-012AA

Power Dissipation-Max :

2.5W Ta

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Qualification Status :

Not Qualified

Factory Lead Time :

12 Weeks

Number of Elements :

1

Terminal Position :

Dual

Drain-source On Resistance-Max :

0.022Ohm

Gate Charge (Qg) (Max) @ Vgs :

51nC @ 10V

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain to Source Voltage (Vdss) :

100V

Peak Reflow Temperature (Cel) :

260

Input Capacitance (Ciss) (Max) @ Vds :

1530pF @ 25V

DS Breakdown Voltage-Min :

100V

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-609 Code :

e3

Packaging :

Tube

ECCN Code :

EAR99

JESD-30 Code :

R-PDSO-G8

Terminal Finish :

Matte Tin (Sn)

Terminal Form :

Gull wing

Vgs(th) (Max) @ Id :

4V @ 250µA

FET Type :

N-Channel

Series :

HEXFET®

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

30

Number of Terminations :

8

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~150°C TJ

Vgs (Max) :

±20V

Published :

2003

Drain Current-Max (Abs) (ID) :

7.3A

Current - Continuous Drain (Id) @ 25°C :

7.3A Ta

Package / Case :

8-SOIC (0.154, 3.90mm Width)