IRF7494TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Breakdown Voltage :

150V

Power Dissipation :

2.5W

Height :

1.4986mm

Drain to Source Resistance :

44mOhm

REACH SVHC :

Unknown

Vgs (Max) :

±20V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Resistance :

44mOhm

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

53nC @ 10V

Length :

4.9784mm

Published :

2008

Packaging :

Tape and Reel (TR)

RoHS Status :

RoHS Compliant

Turn On Delay Time :

9 ns

Input Capacitance (Ciss) (Max) @ Vds :

1783pF @ 25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Series :

HEXFET®

Fall Time (Typ) :

14 ns

Max Operating Temperature :

150°C

Rise Time :

10ns

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

44mOhm @ 3.1A, 10V

Lead Free :

Lead Free

Mounting Type :

Surface Mount

Gate to Source Voltage (Vgs) :

20V

Turn-Off Delay Time :

29 ns

Input Capacitance :

1.783nF

Continuous Drain Current (ID) :

5.1A

Number of Elements :

1

Width :

3.9878mm

Number of Pins :

8

Rds On Max :

44 mΩ

Current - Continuous Drain (Id) @ 25°C :

5.1A Ta

Power Dissipation-Max :

2.5W Ta

Min Operating Temperature :

-55°C

Supplier Device Package :

8-SO

Drain to Source Voltage (Vdss) :

150V

Mount :

Surface Mount

Radiation Hardening :

No

Vgs(th) (Max) @ Id :

4V @ 250µA