IRF7493TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Surface Mount

FET Type :

N-Channel

Threshold Voltage :

4V

Length :

4.9784mm

Operating Temperature :

-55°C~150°C TJ

Radiation Hardening :

No

Gate to Source Voltage (Vgs) :

20V

Packaging :

Tape and Reel (TR)

Width :

3.9878mm

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

53nC @ 10V

Number of Pins :

8

Vgs(th) (Max) @ Id :

4V @ 250µA

Turn-Off Delay Time :

30 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

7.5ns

Rds On (Max) @ Id, Vgs :

15m Ω @ 5.6A, 10V

Current Rating :

9.3A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Terminations :

8

Terminal Form :

Gull wing

Termination :

SMD/SMT

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Nominal Vgs :

4 V

Series :

HEXFET®

Continuous Drain Current (ID) :

9.3A

REACH SVHC :

No SVHC

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

1510pF @ 25V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

ECCN Code :

EAR99

Vgs (Max) :

±20V

Turn On Delay Time :

8.3 ns

Transistor Element Material :

SILICON

Voltage - Rated DC :

80V

Element Configuration :

Single

Dual Supply Voltage :

80V

Power Dissipation :

2.5W

Published :

2003

Factory Lead Time :

12 Weeks

Terminal Position :

Dual

Height :

1.4986mm

Fall Time (Typ) :

12 ns

Lead Free :

Contains Lead, Lead Free

Current - Continuous Drain (Id) @ 25°C :

9.3A Tc

Drain to Source Breakdown Voltage :

80V

Resistance :

15mOhm

Recovery Time :

56 ns

Pulsed Drain Current-Max (IDM) :

74A

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

2.5W Tc