IRF7493TR

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

74A

ECCN Code :

EAR99

Continuous Drain Current (ID) :

9.3A

Rise Time :

7.5ns

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

1510pF @ 25V

Packaging :

Tape and Reel (TR)

Gate Charge (Qg) (Max) @ Vgs :

53nC @ 10V

Drain-source On Resistance-Max :

0.015Ohm

Power Dissipation-Max :

2.5W Tc

Published :

2001

Current Rating :

9.3A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

15m Ω @ 5.6A, 10V

Number of Terminations :

8

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

9.3A Tc

Series :

HEXFET®

Operating Temperature :

-55°C~150°C TJ

Number of Pins :

8

Terminal Position :

Dual

RoHS Status :

Non-RoHS Compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

4V @ 250µA

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain to Source Breakdown Voltage :

80V

Lead Free :

Contains Lead

JEDEC-95 Code :

MS-012AA

Power Dissipation :

2.5W

Terminal Form :

Gull wing

Voltage - Rated DC :

80V

Mount :

Surface Mount

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs (Max) :

±20V