IRF7493PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

4V @ 250µA

JESD-609 Code :

e3

Power Dissipation-Max :

2.5W Tc

Rds On (Max) @ Id, Vgs :

15m Ω @ 5.6A, 10V

FET Type :

N-Channel

JEDEC-95 Code :

MS-012AA

Current - Continuous Drain (Id) @ 25°C :

9.3A Tc

Avalanche Energy Rating (Eas) :

180 mJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain Current-Max (Abs) (ID) :

9.3A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Packaging :

Tube

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

SINGLE WITH BUILT-IN DIODE

Series :

HEXFET®

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Published :

2003

Gate Charge (Qg) (Max) @ Vgs :

53nC @ 10V

Factory Lead Time :

12 Weeks

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Terminal Position :

Dual

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

1510pF @ 25V

Drain-source On Resistance-Max :

0.015Ohm

Transistor Application :

SWITCHING

DS Breakdown Voltage-Min :

80V

Number of Terminations :

8

Qualification Status :

Not Qualified

ECCN Code :

EAR99

Drain to Source Voltage (Vdss) :

80V

Terminal Finish :

Matte Tin (Sn)

Surface Mount :

yes

JESD-30 Code :

R-PDSO-G8

Transistor Element Material :

SILICON

Vgs (Max) :

±20V

Number of Elements :

1

Terminal Form :

Gull wing

Pulsed Drain Current-Max (IDM) :

74A