IRF7492PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

59nC @ 10V

Fall Time (Typ) :

14 ns

Rise Time :

13ns

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

2.5W

Rds On Max :

79 mΩ

Width :

4.05mm

Turn-Off Delay Time :

27 ns

Current - Continuous Drain (Id) @ 25°C :

3.7A Ta

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Drain to Source Breakdown Voltage :

200V

Height :

1.4986mm

Supplier Device Package :

8-SO

Number of Elements :

1

Vgs (Max) :

±20V

Max Operating Temperature :

150°C

Gate to Source Voltage (Vgs) :

20V

Power Dissipation-Max :

2.5W Ta

Length :

4.9784mm

RoHS Status :

RoHS Compliant

Rds On (Max) @ Id, Vgs :

79mOhm @ 2.2A, 10V

Radiation Hardening :

No

Packaging :

Tube

Published :

2006

Threshold Voltage :

2.5V

Min Operating Temperature :

-55°C

Turn On Delay Time :

15 ns

Input Capacitance :

1.82nF

Recovery Time :

100 ns

Drain to Source Resistance :

79mOhm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mount :

Surface Mount

FET Type :

N-Channel

Nominal Vgs :

2.5 V

Dual Supply Voltage :

200V

Number of Pins :

8

REACH SVHC :

No SVHC

Operating Temperature :

-55°C~150°C TJ

Drain to Source Voltage (Vdss) :

200V

Input Capacitance (Ciss) (Max) @ Vds :

1820pF @ 25V

Lead Free :

Lead Free

Continuous Drain Current (ID) :

3.7A

Series :

HEXFET®

Mounting Type :

Surface Mount