IRF7490TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

56nC @ 10V

Pulsed Drain Current-Max (IDM) :

43A

Current - Continuous Drain (Id) @ 25°C :

5.4A Ta

Input Capacitance (Ciss) (Max) @ Vds :

1720pF @ 25V

Gate to Source Voltage (Vgs) :

20V

REACH SVHC :

No SVHC

Transistor Application :

SWITCHING

Rise Time :

4.2ns

Nominal Vgs :

4 V

Terminal Position :

Dual

Number of Elements :

1

Continuous Drain Current (ID) :

5.4A

Dual Supply Voltage :

100V

Element Configuration :

Single

Lead Free :

Lead Free

Operating Temperature :

-55°C~150°C TJ

Contact Plating :

Tin

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

4V @ 250µA

Rds On (Max) @ Id, Vgs :

39m Ω @ 3.2A, 10V

Radiation Hardening :

No

Vgs (Max) :

±20V

Transistor Element Material :

SILICON

Voltage - Rated DC :

100V

Packaging :

Tape and Reel (TR)

Height :

1.4986mm

Turn On Delay Time :

13 ns

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Number of Pins :

8

Length :

4.9784mm

Threshold Voltage :

4V

Row Spacing :

6.3 mm

Fall Time (Typ) :

11 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

HEXFET®

Mount :

Surface Mount

Drain to Source Breakdown Voltage :

100V

Power Dissipation-Max :

2.5W Ta

Factory Lead Time :

12 Weeks

Resistance :

39mOhm

ECCN Code :

EAR99

Terminal Form :

Gull wing

Current Rating :

5.4A

Power Dissipation :

2.5W

Number of Terminations :

8

Drive Voltage (Max Rds On,Min Rds On) :

10V

Turn-Off Delay Time :

51 ns

Operating Mode :

ENHANCEMENT MODE

Width :

3.9878mm

Published :

2002