IRF7484TRPBF
- Mfr.Part #
- IRF7484TRPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 14A 8SO
- Stock
- 2,661
- In Stock :
- 2,661
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 14A Ta
- Number of Elements :
- 1
- Drain to Source Breakdown Voltage :
- 40V
- Packaging :
- Tape and Reel (TR)
- Fall Time (Typ) :
- 58 ns
- Drain to Source Resistance :
- 10MOhm
- Power Dissipation-Max :
- 2.5W Ta
- FET Type :
- N-Channel
- Rds On (Max) @ Id, Vgs :
- 10mOhm @ 14A, 7V
- Number of Pins :
- 8
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Operating Temperature :
- 150°C
- Input Capacitance :
- 3.52nF
- Supplier Device Package :
- 8-SO
- Gate Charge (Qg) (Max) @ Vgs :
- 100nC @ 7V
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Published :
- 2010
- Vgs (Max) :
- ±8V
- Operating Temperature :
- -55°C~150°C TJ
- Series :
- HEXFET®
- Continuous Drain Current (ID) :
- 14A
- Input Capacitance (Ciss) (Max) @ Vds :
- 3520pF @ 25V
- Power Dissipation :
- 2.5W
- Mount :
- Surface Mount
- Element Configuration :
- Single
- Rds On Max :
- 10 MΩ
- Gate to Source Voltage (Vgs) :
- 8V
- RoHS Status :
- RoHS Compliant
- Mounting Type :
- Surface Mount
- Rise Time :
- 5ns
- Drain to Source Voltage (Vdss) :
- 40V
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Min Operating Temperature :
- -55°C
- Drive Voltage (Max Rds On,Min Rds On) :
- 7V
- Datasheets
- IRF7484TRPBF

N-Channel Tape & Reel (TR) 10mOhm @ 14A, 7V ±8V 3520pF @ 25V 100nC @ 7V 40V 8-SOIC (0.154, 3.90mm Width)
IRF7484TRPBF Overview
The maximum input capacitance of this device is 3520pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 14A.When VGS=40V, and ID flows to VDS at 40VVDS, the drain-source breakdown voltage is 40V in this device.MOSFETs exhibit Drain-to-Source Resistance when a specific gate-to-source voltage (VGS) is applied to bias them into the on state, and this device's resistance is 10mOhm.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.The drain-to-source voltage (Vdss) of this transistor needs to be at 40V in order to operate.Using drive voltage (7V), this device helps reduce its power consumption.
IRF7484TRPBF Features
a continuous drain current (ID) of 14A
a drain-to-source breakdown voltage of 40V voltage
single MOSFETs transistor is 10mOhm
a 40V drain to source voltage (Vdss)
IRF7484TRPBF Applications
There are a lot of Infineon Technologies
IRF7484TRPBF applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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