IRF7484PBF
- Mfr.Part #
- IRF7484PBF
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 14A 8SO
- Stock
- 24,556
- In Stock :
- 24,556
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 14A Ta
- Input Capacitance (Ciss) (Max) @ Vds :
- 3520pF @ 25V
- Supplier Device Package :
- 8-SO
- RoHS Status :
- RoHS Compliant
- Voltage - Rated DC :
- 40V
- Series :
- HEXFET®
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- FET Type :
- N-Channel
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Rise Time :
- 5ns
- Mount :
- Surface Mount
- Published :
- 2004
- Gate Charge (Qg) (Max) @ Vgs :
- 100nC @ 7V
- Number of Pins :
- 8
- Lead Free :
- Lead Free
- Drain to Source Voltage (Vdss) :
- 40V
- Gate to Source Voltage (Vgs) :
- 8V
- Turn-Off Delay Time :
- 180 ns
- Radiation Hardening :
- No
- Power Dissipation-Max :
- 2.5W Ta
- Input Capacitance :
- 3.52nF
- Rds On (Max) @ Id, Vgs :
- 10mOhm @ 14A, 7V
- Continuous Drain Current (ID) :
- 14A
- Mounting Type :
- Surface Mount
- Min Operating Temperature :
- -55°C
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Drain to Source Breakdown Voltage :
- 40V
- Vgs (Max) :
- ±8V
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation :
- 2.5W
- Fall Time (Typ) :
- 58 ns
- Current Rating :
- 14A
- Number of Elements :
- 1
- Drive Voltage (Max Rds On,Min Rds On) :
- 7V
- Rds On Max :
- 10 MΩ
- Max Operating Temperature :
- 150°C
- Packaging :
- Tube
- Drain to Source Resistance :
- 10MOhm
- Datasheets
- IRF7484PBF

N-Channel Tube 10mOhm @ 14A, 7V ±8V 3520pF @ 25V 100nC @ 7V 40V 8-SOIC (0.154, 3.90mm Width)
IRF7484PBF Overview
The maximum input capacitance of this device is 3520pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 14A.When VGS=40V, and ID flows to VDS at 40VVDS, the drain-source breakdown voltage is 40V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 180 ns.MOSFETs exhibit Drain-to-Source Resistance when a specific gate-to-source voltage (VGS) is applied to bias them into the on state, and this device's resistance is 10MOhm.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.The drain-to-source voltage (Vdss) of this transistor needs to be at 40V in order to operate.Using drive voltage (7V), this device helps reduce its power consumption.
IRF7484PBF Features
a continuous drain current (ID) of 14A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 180 ns
single MOSFETs transistor is 10MOhm
a 40V drain to source voltage (Vdss)
IRF7484PBF Applications
There are a lot of Infineon Technologies
IRF7484PBF applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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