IRF7480MTRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Input Capacitance (Ciss) (Max) @ Vds :

6680pF @ 25V

Gate to Source Voltage (Vgs) :

20V

Current - Continuous Drain (Id) @ 25°C :

217A Tc

Rise Time :

70ns

Lead Free :

Lead Free

Terminal Position :

BOTTOM

DS Breakdown Voltage-Min :

40V

Pulsed Drain Current-Max (IDM) :

868A

JESD-30 Code :

R-XBCC-N6

Case Connection :

DRAIN

ECCN Code :

EAR99

Terminal Form :

NO LEAD

Power Dissipation-Max :

96W Tc

Vgs (Max) :

±20V

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Continuous Drain Current (ID) :

217A

Vgs(th) (Max) @ Id :

3.9V @ 150μA

Rds On (Max) @ Id, Vgs :

1.2m Ω @ 132A, 10V

Mount :

Surface Mount

Transistor Element Material :

SILICON

Series :

HEXFET®, StrongIRFET™

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Fall Time (Typ) :

58 ns

Number of Terminations :

6

Element Configuration :

Single

Number of Channels :

1

Number of Pins :

10

Gate Charge (Qg) (Max) @ Vgs :

185nC @ 10V

FET Type :

N-Channel

Turn-Off Delay Time :

68 ns

Drain to Source Voltage (Vdss) :

40V

Published :

2007

Factory Lead Time :

10 Weeks

Transistor Application :

SWITCHING

Avalanche Energy Rating (Eas) :

206 mJ

Number of Elements :

1

Operating Temperature :

-55°C~150°C TJ

Operating Mode :

ENHANCEMENT MODE

Package / Case :

DirectFET™ Isometric ME

Turn On Delay Time :

21 ns