IRF7478TRPBF-1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs (Max) :

±20V

Power Dissipation (Max) :

2.5W (Ta)

Technology :

MOSFET (Metal Oxide)

Drain Current-Max (Abs) (ID) :

7 A

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Configuration :

Single

Operating Temperature :

-55°C ~ 150°C (TJ)

Drain to Source Voltage (Vdss) :

60 V

Vgs(th) (Max) @ Id :

3V @ 250µA

Reach Compliance Code :

Compliant

Package / Case :

8-SOIC (0.154, 3.90mm Width)

FET Feature :

-

Manufacturer :

Infineon Technologies AG

Polarity/Channel Type :

N-Channel

ECCN Code :

EAR99

Surface Mount :

yes

Input Capacitance (Ciss) (Max) @ Vds :

1740 pF @ 25 V

Supplier Device Package :

8-SO

Product Status :

Obsolete

Power Dissipation-Max (Abs) :

2.5 W

Package :

Tape and Reel (TR)

Gate Charge (Qg) (Max) @ Vgs :

31 nC @ 4.5 V

Current - Continuous Drain (Id) @ 25°C :

7A (Ta)

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

Rds On (Max) @ Id, Vgs :

26mOhm @ 4.2A, 10V

FET Type :

N-Channel

Subcategory :

FET General Purpose Power

Series :

HEXFET®

Mounting Type :

Surface Mount