IRF7478QTRPBF
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- Mfr.Part #
- IRF7478QTRPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 7A 8-SOIC
- Stock
- 46,123
- In Stock ：
- 46,123
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Elements :
- 1
- RoHS Status :
- RoHS Compliant
- Series :
- HEXFET®
- Rds On Max :
- 26 mΩ
- Max Power Dissipation :
- 2.5W
- Min Operating Temperature :
- -55°C
- Continuous Drain Current (ID) :
- 4.2A
- Height :
- 1.4986mm
- Gate to Source Voltage (Vgs) :
- 20V
- Supplier Device Package :
- 8-SO
- Packaging :
- Cut Tape (CT)
- Rise Time :
- 2.6ns
- Published :
- 2014
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Length :
- 4.9784mm
- Rds On (Max) @ Id, Vgs :
- 26mOhm @ 4.2A, 10V
- Max Operating Temperature :
- 150°C
- Turn-Off Delay Time :
- 44 ns
- Drain to Source Voltage (Vdss) :
- 60V
- Fall Time (Typ) :
- 13 ns
- Number of Pins :
- 8
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Mount :
- Surface Mount
- Gate Charge (Qg) (Max) @ Vgs :
- 31nC @ 4.5V
- Input Capacitance :
- 1.74nF
- Radiation Hardening :
- No
- FET Type :
- N-Channel
- Power Dissipation :
- 2.5W
- Width :
- 3.9878mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Surface Mount
- Input Capacitance (Ciss) (Max) @ Vds :
- 1740pF @ 25V
- Drain to Source Resistance :
- 30mOhm
- Turn On Delay Time :
- 7.7 ns
- Current - Continuous Drain (Id) @ 25°C :
- 7A Ta
- Datasheets
- IRF7478QTRPBF
N-Channel Cut Tape (CT) 26mOhm @ 4.2A, 10V 1740pF @ 25V 31nC @ 4.5V 60V 8-SOIC (0.154, 3.90mm Width)
IRF7478QTRPBF Overview
The maximum input capacitance of this device is 1740pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 4.2A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 44 ns.MOSFETs exhibit Drain-to-Source Resistance when a specific gate-to-source voltage (VGS) is applied to bias them into the on state, and this device's resistance is 30mOhm.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 7.7 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.The drain-to-source voltage (Vdss) of this transistor needs to be at 60V in order to operate.
IRF7478QTRPBF Features
a continuous drain current (ID) of 4.2A
the turn-off delay time is 44 ns
single MOSFETs transistor is 30mOhm
a 60V drain to source voltage (Vdss)
IRF7478QTRPBF Applications
There are a lot of Infineon Technologies
IRF7478QTRPBF applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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