IRF7476

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Surface Mount :

yes

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

15A Ta

Time@Peak Reflow Temperature-Max (s) :

30

Power Dissipation-Max :

2.5W Ta

Drain Current-Max (Abs) (ID) :

15A

Operating Mode :

ENHANCEMENT MODE

Qualification Status :

Not Qualified

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Packaging :

Tube

Published :

2002

Vgs(th) (Max) @ Id :

1.9V @ 250μA

JESD-609 Code :

e0

Drain-source On Resistance-Max :

0.008Ohm

JEDEC-95 Code :

MS-012AA

Terminal Position :

Dual

Vgs (Max) :

±12V

Number of Terminations :

8

FET Type :

N-Channel

Drain to Source Voltage (Vdss) :

12V

DS Breakdown Voltage-Min :

12V

Drive Voltage (Max Rds On,Min Rds On) :

2.8V 4.5V

Terminal Form :

Gull wing

RoHS Status :

Non-RoHS Compliant

JESD-30 Code :

R-PDSO-G8

Rds On (Max) @ Id, Vgs :

8m Ω @ 15A, 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

2550pF @ 6V

Operating Temperature :

-55°C~150°C TJ

Terminal Finish :

Tin/Lead (Sn/Pb)

Series :

HEXFET®

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 4.5V

Configuration :

SINGLE WITH BUILT-IN DIODE

Peak Reflow Temperature (Cel) :

245