IRF7475TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Element Configuration :

Single

Drive Voltage (Max Rds On,Min Rds On) :

2.8V 4.5V

Power Dissipation :

2.5W

FET Type :

N-Channel

Rise Time :

33ns

Series :

HEXFET®

Turn-Off Delay Time :

13 ns

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Input Capacitance (Ciss) (Max) @ Vds :

1590pF @ 6V

Mount :

Surface Mount

Continuous Drain Current (ID) :

11A

Rds On Max :

15 mΩ

Vgs (Max) :

±12V

Max Operating Temperature :

150°C

Gate to Source Voltage (Vgs) :

12V

Input Capacitance :

1.59nF

Drain to Source Breakdown Voltage :

12V

Published :

2004

Drain to Source Voltage (Vdss) :

12V

Number of Pins :

8

Supplier Device Package :

8-SO

RoHS Status :

RoHS Compliant

Drain to Source Resistance :

15mOhm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

Radiation Hardening :

No

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

15mOhm @ 8.8A, 4.5V

Current - Continuous Drain (Id) @ 25°C :

11A Ta

Packaging :

Tape and Reel (TR)

Gate Charge (Qg) (Max) @ Vgs :

19nC @ 4.5V

Power Dissipation-Max :

2.5W Ta

Height :

1.4986mm

Vgs(th) (Max) @ Id :

2V @ 250μA

Length :

4.9784mm

Width :

3.9878mm

Fall Time (Typ) :

7.5 ns

Turn On Delay Time :

7.5 ns

Min Operating Temperature :

-55°C