IRF7473TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

20ns

Terminal Finish :

Matte Tin (Sn)

Radiation Hardening :

No

Terminal Form :

Gull wing

Dual Supply Voltage :

100V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs(th) (Max) @ Id :

5.5V @ 250µA

Width :

3.9878mm

Mount :

Surface Mount

Power Dissipation :

2.5W

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

26m Ω @ 4.1A, 10V

Fall Time (Typ) :

11 ns

Operating Temperature :

-55°C~150°C TJ

Height :

1.4986mm

Nominal Vgs :

5.5 V

Power Dissipation-Max :

2.5W Ta

Published :

2004

Time@Peak Reflow Temperature-Max (s) :

30

Continuous Drain Current (ID) :

6.9A

Factory Lead Time :

12 Weeks

REACH SVHC :

No SVHC

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Drain to Source Breakdown Voltage :

100V

Row Spacing :

6.3 mm

RoHS Status :

ROHS3 Compliant

Current Rating :

6.9A

ECCN Code :

EAR99

JESD-609 Code :

e3

Voltage - Rated DC :

100V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

29 ns

Turn On Delay Time :

24 ns

Additional Feature :

ULTRA LOW RESISTANCE

Transistor Element Material :

SILICON

Vgs (Max) :

±20V

Series :

HEXFET®

Number of Terminations :

8

Element Configuration :

Single

Gate to Source Voltage (Vgs) :

20V

Packaging :

Tape and Reel (TR)

Length :

4.9784mm

Threshold Voltage :

5.5V

Gate Charge (Qg) (Max) @ Vgs :

61nC @ 10V

Transistor Application :

SWITCHING

Lead Free :

Contains Lead, Lead Free

FET Type :

N-Channel

Number of Elements :

1

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Drain-source On Resistance-Max :

0.026ohm

Pulsed Drain Current-Max (IDM) :

55A

Number of Pins :

8

Termination :

SMD/SMT

Input Capacitance (Ciss) (Max) @ Vds :

3180pF @ 25V

Current - Continuous Drain (Id) @ 25°C :

6.9A Ta

Terminal Position :

Dual