IRF7473PBF

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Drain-source On Resistance-Max :

0.026ohm

Pulsed Drain Current-Max (IDM) :

55A

Avalanche Energy Rating (Eas) :

140 mJ

Number of Terminations :

8

Drain Current-Max (Abs) (ID) :

6.9A

Gate Charge (Qg) (Max) @ Vgs :

61nC @ 10V

Power Dissipation-Max :

2.5W Ta

Rds On (Max) @ Id, Vgs :

26m Ω @ 4.1A, 10V

Surface Mount :

yes

Configuration :

SINGLE WITH BUILT-IN DIODE

Published :

2004

Terminal Position :

Dual

Vgs(th) (Max) @ Id :

5.5V @ 250µA

Drain to Source Voltage (Vdss) :

100V

Series :

HEXFET®

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

30

Number of Elements :

1

DS Breakdown Voltage-Min :

100V

JESD-30 Code :

R-PDSO-G8

Packaging :

Tube

Peak Reflow Temperature (Cel) :

260

Vgs (Max) :

±20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Qualification Status :

Not Qualified

FET Type :

N-Channel

JESD-609 Code :

e3

Input Capacitance (Ciss) (Max) @ Vds :

3180pF @ 25V

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

Matte Tin (Sn)

JEDEC-95 Code :

MS-012AA

Terminal Form :

Gull wing

Current - Continuous Drain (Id) @ 25°C :

6.9A Ta

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Element Material :

SILICON

Package / Case :

8-SOIC (0.154, 3.90mm Width)