IRF7471PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Threshold Voltage :

3V

Fall Time (Typ) :

4.1 ns

Vgs (Max) :

±20V

Turn-Off Delay Time :

15 ns

Gate Charge (Qg) (Max) @ Vgs :

32nC @ 4.5V

Max Operating Temperature :

150°C

Series :

HEXFET®

Operating Temperature :

-55°C~150°C TJ

Turn On Delay Time :

12 ns

Rise Time :

2.7ns

Radiation Hardening :

No

FET Type :

N-Channel

REACH SVHC :

No SVHC

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tube

Rds On Max :

13 mΩ

Drain to Source Voltage (Vdss) :

40V

Continuous Drain Current (ID) :

10A

Input Capacitance :

2.82nF

Length :

5mm

Drain to Source Resistance :

16mOhm

RoHS Status :

RoHS Compliant

Published :

2004

Vgs(th) (Max) @ Id :

3V @ 250µA

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Rds On (Max) @ Id, Vgs :

13mOhm @ 10A, 10V

Current - Continuous Drain (Id) @ 25°C :

10A Ta

Lead Free :

Lead Free

Drain to Source Breakdown Voltage :

40V

Current Rating :

10A

Supplier Device Package :

8-SO

Voltage - Rated DC :

40V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Min Operating Temperature :

-55°C

Power Dissipation :

2.5W

Gate to Source Voltage (Vgs) :

20V

Mounting Type :

Surface Mount

Height :

1.5mm

Width :

4mm

Power Dissipation-Max :

2.5W Ta

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

2820pF @ 20V

Mount :

Surface Mount

Number of Pins :

8