IRF7470TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Pulsed Drain Current-Max (IDM) :

85A

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Avalanche Energy Rating (Eas) :

300 mJ

Vgs (Max) :

±12V

Factory Lead Time :

12 Weeks

Number of Elements :

1

Series :

HEXFET®

DS Breakdown Voltage-Min :

40V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

44nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

3430pF @ 20V

Drive Voltage (Max Rds On,Min Rds On) :

2.8V 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

ECCN Code :

EAR99

Mounting Type :

Surface Mount

Terminal Position :

Dual

Surface Mount :

yes

Time@Peak Reflow Temperature-Max (s) :

30

Peak Reflow Temperature (Cel) :

260

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

13m Ω @ 10A, 10V

JESD-609 Code :

e3

Drain Current-Max (Abs) (ID) :

10A

Vgs(th) (Max) @ Id :

2V @ 250μA

Current - Continuous Drain (Id) @ 25°C :

10A Ta

Power Dissipation-Max :

2.5W Ta

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tape and Reel (TR)

Published :

2003

JEDEC-95 Code :

MS-012AA

Number of Terminations :

8

RoHS Status :

ROHS3 Compliant

Drain to Source Voltage (Vdss) :

40V

Drain-source On Resistance-Max :

0.013Ohm

Terminal Finish :

Matte Tin (Sn)

JESD-30 Code :

R-PDSO-G8

Terminal Form :

Gull wing

Transistor Application :

SWITCHING