IRF7470TR

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

FET Type :

N-Channel

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Avalanche Energy Rating (Eas) :

300 mJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Power Dissipation-Max :

2.5W Ta

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Position :

Dual

RoHS Status :

Non-RoHS Compliant

Transistor Application :

SWITCHING

JEDEC-95 Code :

MS-012AA

ECCN Code :

EAR99

Current Rating :

11A

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.013Ohm

Continuous Drain Current (ID) :

10A

Input Capacitance (Ciss) (Max) @ Vds :

3430pF @ 20V

Qualification Status :

Not Qualified

Additional Feature :

AVALANCHE RATED

Drive Voltage (Max Rds On,Min Rds On) :

2.8V 10V

Number of Pins :

8

JESD-609 Code :

e3

Rise Time :

1.9ns

Mount :

Surface Mount

Vgs (Max) :

±12V

Number of Terminations :

8

Packaging :

Tape and Reel (TR)

Voltage - Rated DC :

40V

Published :

2003

Vgs(th) (Max) @ Id :

2V @ 250μA

Lead Free :

Contains Lead

Current - Continuous Drain (Id) @ 25°C :

10A Ta

Rds On (Max) @ Id, Vgs :

13m Ω @ 10A, 10V

Series :

HEXFET®

Number of Elements :

1

Terminal Finish :

Matte Tin (Sn)

Gate Charge (Qg) (Max) @ Vgs :

44nC @ 4.5V

Mounting Type :

Surface Mount

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ