IRF7469TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

REACH SVHC :

No SVHC

Power Dissipation :

2.5W

Mount :

Surface Mount

Rise Time :

2.2ns

Input Capacitance (Ciss) (Max) @ Vds :

2000pF @ 20V

Turn-Off Delay Time :

14 ns

Pulsed Drain Current-Max (IDM) :

73A

Factory Lead Time :

12 Weeks

Number of Terminations :

8

Terminal Position :

Dual

Published :

2004

Packaging :

Tape and Reel (TR)

Gate to Source Voltage (Vgs) :

20V

Rds On (Max) @ Id, Vgs :

17m Ω @ 9A, 10V

Element Configuration :

Single

Transistor Element Material :

SILICON

Current Rating :

9A

Drain Current-Max (Abs) (ID) :

9A

Operating Mode :

ENHANCEMENT MODE

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Continuous Drain Current (ID) :

9A

Height :

1.4986mm

Resistance :

17mOhm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

9A Ta

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Pins :

8

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

3V @ 250µA

Drain to Source Breakdown Voltage :

40V

Length :

4.9784mm

Fall Time (Typ) :

3.5 ns

Power Dissipation-Max :

2.5W Ta

Width :

3.9878mm

Threshold Voltage :

3V

Nominal Vgs :

3 V

Number of Elements :

1

Lead Free :

Contains Lead, Lead Free

Operating Temperature :

-55°C~150°C TJ

Terminal Form :

Gull wing

Turn On Delay Time :

11 ns

Voltage - Rated DC :

40V

Radiation Hardening :

No

Gate Charge (Qg) (Max) @ Vgs :

23nC @ 4.5V

Series :

HEXFET®

FET Type :

N-Channel

Vgs (Max) :

±20V