IRF7469

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Form :

Gull wing

Drain to Source Voltage (Vdss) :

40V

Series :

HEXFET®

Vgs(th) (Max) @ Id :

3V @ 250µA

Time@Peak Reflow Temperature-Max (s) :

30

Rds On (Max) @ Id, Vgs :

17m Ω @ 9A, 10V

Surface Mount :

yes

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

245

Mounting Type :

Surface Mount

Packaging :

Tube

FET Type :

N-Channel

Vgs (Max) :

±20V

Qualification Status :

Not Qualified

Gate Charge (Qg) (Max) @ Vgs :

23nC @ 4.5V

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

8

JESD-609 Code :

e0

Published :

2004

Drain Current-Max (Abs) (ID) :

9A

Pulsed Drain Current-Max (IDM) :

73A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

HTS Code :

8541.29.00.95

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Avalanche Energy Rating (Eas) :

210 mJ

Terminal Finish :

TIN LEAD

JEDEC-95 Code :

MS-012AA

Number of Elements :

1

DS Breakdown Voltage-Min :

40V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

JESD-30 Code :

R-PDSO-G8

RoHS Status :

Non-RoHS Compliant

Power Dissipation-Max :

2.5W Ta

Terminal Position :

Dual

Input Capacitance (Ciss) (Max) @ Vds :

2000pF @ 20V

Current - Continuous Drain (Id) @ 25°C :

9A Ta

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.017Ohm

Package / Case :

8-SOIC (0.154, 3.90mm Width)