IRF7468PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

REACH SVHC :

No SVHC

Number of Elements :

1

Mount :

Surface Mount

Voltage - Rated DC :

40V

Published :

2004

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Additional Feature :

AVALANCHE RATED

Packaging :

Tube

Continuous Drain Current (ID) :

9.4A

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±12V

Turn-Off Delay Time :

20 ns

Mounting Type :

Surface Mount

Terminal Finish :

Matte Tin (Sn)

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max :

2.5W Ta

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

34nC @ 4.5V

Fall Time (Typ) :

3.8 ns

Current Rating :

9.4A

Drain to Source Breakdown Voltage :

40V

Height :

1.4986mm

Number of Pins :

8

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Power Dissipation :

2.5W

Terminal Position :

Dual

Rds On (Max) @ Id, Vgs :

15.5m Ω @ 9.4A, 10V

Rise Time :

2.3ns

Lead Free :

Lead Free

Current - Continuous Drain (Id) @ 25°C :

9.4A Ta

Pulsed Drain Current-Max (IDM) :

75A

ECCN Code :

EAR99

Width :

3.9878mm

Transistor Element Material :

SILICON

Threshold Voltage :

2V

Vgs(th) (Max) @ Id :

2V @ 250μA

Series :

HEXFET®

Resistance :

15.5MOhm

Terminal Form :

Gull wing

Input Capacitance (Ciss) (Max) @ Vds :

2460pF @ 20V

Gate to Source Voltage (Vgs) :

12V

Turn On Delay Time :

7.6 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

8

Operating Temperature :

-55°C~150°C TJ

Radiation Hardening :

No

Length :

4.9784mm

Transistor Application :

SWITCHING