IRF7468

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~150°C TJ

Power Dissipation-Max :

2.5W Ta

Gate Charge (Qg) (Max) @ Vgs :

34nC @ 4.5V

Terminal Finish :

NOT SPECIFIED

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain Current-Max (Abs) (ID) :

9.4A

Terminal Position :

Dual

Avalanche Energy Rating (Eas) :

160 mJ

Transistor Application :

SWITCHING

JEDEC-95 Code :

MS-012AA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

9.4A Ta

Additional Feature :

AVALANCHE RATED

Pulsed Drain Current-Max (IDM) :

75A

Vgs (Max) :

±12V

FET Type :

N-Channel

Published :

2004

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Terminations :

8

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tube

Rds On (Max) @ Id, Vgs :

15.5m Ω @ 9.4A, 10V

Mounting Type :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

2V @ 250μA

Series :

HEXFET®

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Surface Mount :

yes

Drain to Source Voltage (Vdss) :

40V

Drain-source On Resistance-Max :

0.0155Ohm

RoHS Status :

Non-RoHS Compliant

Input Capacitance (Ciss) (Max) @ Vds :

2460pF @ 20V

DS Breakdown Voltage-Min :

40V

JESD-30 Code :

R-PDSO-G8

Terminal Form :

Gull wing

Configuration :

SINGLE WITH BUILT-IN DIODE