IRF7467TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance :

2.53nF

Rds On (Max) @ Id, Vgs :

12mOhm @ 11A, 10V

Turn-Off Delay Time :

19 ns

Continuous Drain Current (ID) :

11A

Series :

HEXFET®

Mounting Type :

Surface Mount

Drain to Source Breakdown Voltage :

30V

Number of Pins :

8

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Supplier Device Package :

8-SO

Min Operating Temperature :

-55°C

Element Configuration :

Single

Number of Elements :

1

Power Dissipation :

2.5W

Power Dissipation-Max :

2.5W Ta

Drain to Source Resistance :

12mOhm

Current - Continuous Drain (Id) @ 25°C :

11A Ta

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

2V @ 250μA

RoHS Status :

RoHS Compliant

Fall Time (Typ) :

4 ns

Drive Voltage (Max Rds On,Min Rds On) :

2.8V 10V

Turn On Delay Time :

7.8 ns

Radiation Hardening :

No

Vgs (Max) :

±12V

Rise Time :

2.5ns

Input Capacitance (Ciss) (Max) @ Vds :

2530pF @ 15V

Mount :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

32nC @ 4.5V

Operating Temperature :

-55°C~150°C TJ

Drain to Source Voltage (Vdss) :

30V

Published :

2004

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Packaging :

Tape and Reel (TR)

Rds On Max :

12 mΩ

Max Operating Temperature :

150°C

Gate to Source Voltage (Vgs) :

12V