IRF7467
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- Mfr.Part #
- IRF7467
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 11A 8SO
- Stock
- 15,899
- In Stock ：
- 15,899
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Published :
- 2007
- Drain to Source Voltage (Vdss) :
- 30V
- Power Dissipation-Max :
- 2.5W Ta
- RoHS Status :
- Non-RoHS Compliant
- Gate Charge (Qg) (Max) @ Vgs :
- 32nC @ 4.5V
- Series :
- HEXFET®
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Packaging :
- Tube
- Input Capacitance (Ciss) (Max) @ Vds :
- 2530pF @ 15V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C~150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Continuous Drain (Id) @ 25°C :
- 11A Ta
- Rds On (Max) @ Id, Vgs :
- 12mOhm @ 11A, 10V
- FET Type :
- N-Channel
- Vgs (Max) :
- ±12V
- Supplier Device Package :
- 8-SO
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.8V 10V
- Datasheets
- IRF7467
N-Channel Tube 12mOhm @ 11A, 10V ±12V 2530pF @ 15V 32nC @ 4.5V 30V 8-SOIC (0.154, 3.90mm Width)
IRF7467 Description
IRF7467 is an N-channel Power MOSFET transistor from the manufacturer Infineon Technologies with a voltage of 30V. The operating temperature of the IRF7467 is -55°C~150°C TJ and its maximum power dissipation is 2.5W Ta. IRF7467 has 8 pins and it is available in Tube packaging way. The FET Type of IRF7467 is N-channel and its Drain to Source Voltage is 30V.
IRF7467 Features
-
Ultra-Low Gate Impedance
-
Very Low RDS(on) at 4.5V VGS
-
Fully Characterized Avalanche Voltage and Current
IRF7467 Applications
-
High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial use
-
High Frequency Buck Converters for Computer Processor Power
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