IRF7466TRPBF
- Mfr.Part #
- IRF7466TRPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 11A 8SO
- Stock
- 46,252
- In Stock :
- 46,252
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Resistance :
- 12.5mOhm
- Mount :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- RoHS Status :
- RoHS Compliant
- Input Capacitance (Ciss) (Max) @ Vds :
- 2100pF @ 15V
- Voltage - Rated DC :
- 30V
- Series :
- HEXFET®
- Mounting Type :
- Surface Mount
- Supplier Device Package :
- 8-SO
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rds On (Max) @ Id, Vgs :
- 12.5mOhm @ 11A, 10V
- Vgs (Max) :
- ±20V
- Number of Elements :
- 1
- Published :
- 2004
- Gate to Source Voltage (Vgs) :
- 20V
- Operating Temperature :
- -55°C~150°C TJ
- Rds On Max :
- 12.5 mΩ
- Power Dissipation :
- 2.5W
- Continuous Drain Current (ID) :
- 11A
- Lead Free :
- Lead Free
- FET Type :
- N-Channel
- Drain to Source Voltage (Vdss) :
- 30V
- Number of Pins :
- 8
- Current Rating :
- 11A
- Drain to Source Resistance :
- 17mOhm
- Input Capacitance :
- 2.1nF
- Rise Time :
- 2.8ns
- Current - Continuous Drain (Id) @ 25°C :
- 11A Ta
- Power Dissipation-Max :
- 2.5W Ta
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Drain to Source Breakdown Voltage :
- 30V
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Gate Charge (Qg) (Max) @ Vgs :
- 23nC @ 4.5V
- Min Operating Temperature :
- -55°C
- Max Operating Temperature :
- 150°C
- Datasheets
- IRF7466TRPBF

N-Channel Tape & Reel (TR) 12.5mOhm @ 11A, 10V ±20V 2100pF @ 15V 23nC @ 4.5V 30V 8-SOIC (0.154, 3.90mm Width)
IRF7466TRPBF Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 2100pF @ 15V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 11A.With a drain-source breakdown voltage of 30V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 30V.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET into the on state, a drain-to-source resistance of 17mOhm exists between the drain and source.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 30V.Using drive voltage (4.5V 10V) reduces this device's overall power consumption.
IRF7466TRPBF Features
a continuous drain current (ID) of 11A
a drain-to-source breakdown voltage of 30V voltage
single MOSFETs transistor is 17mOhm
a 30V drain to source voltage (Vdss)
IRF7466TRPBF Applications
There are a lot of Infineon Technologies
IRF7466TRPBF applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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