IRF7465PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Surface Mount :

yes

Drain-source On Resistance-Max :

0.28Ohm

Current - Continuous Drain (Id) @ 25°C :

1.9A Ta

FET Type :

N-Channel

Mounting Type :

Surface Mount

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Application :

SWITCHING

Drain Current-Max (Abs) (ID) :

1.9A

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

150V

Series :

HEXFET®

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Temperature :

-55°C~150°C TJ

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

5.5V @ 250µA

Packaging :

Tube

JEDEC-95 Code :

MS-012AA

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

Vgs (Max) :

±30V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Elements :

1

JESD-30 Code :

R-PDSO-G8

Power Dissipation-Max :

2.5W Ta

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Qualification Status :

Not Qualified

Rds On (Max) @ Id, Vgs :

280m Ω @ 1.14A, 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Terminations :

8

Published :

2001

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

DS Breakdown Voltage-Min :

150V

ECCN Code :

EAR99

Terminal Position :

Dual

Input Capacitance (Ciss) (Max) @ Vds :

330pF @ 25V