IRF7465

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2001

Power Dissipation-Max :

2.5W Ta

Peak Reflow Temperature (Cel) :

245

Rds On (Max) @ Id, Vgs :

280m Ω @ 1.14A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain Current-Max (Abs) (ID) :

1.9A

Packaging :

Tube

Transistor Application :

SWITCHING

Terminal Position :

Dual

Terminal Form :

Gull wing

FET Type :

N-Channel

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Vgs(th) (Max) @ Id :

5.5V @ 250µA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

30

JESD-609 Code :

e0

Vgs (Max) :

±30V

DS Breakdown Voltage-Min :

150V

Drain-source On Resistance-Max :

0.28Ohm

Current - Continuous Drain (Id) @ 25°C :

1.9A Ta

Surface Mount :

yes

JEDEC-95 Code :

MS-012AA

JESD-30 Code :

R-PDSO-G8

Series :

HEXFET®

Drain to Source Voltage (Vdss) :

150V

Qualification Status :

Not Qualified

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Mounting Type :

Surface Mount

RoHS Status :

Non-RoHS Compliant

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

330pF @ 25V

Terminal Finish :

TIN LEAD

Number of Terminations :

8