IRF7463TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2004

REACH SVHC :

No SVHC

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Mounting Type :

Surface Mount

Number of Elements :

1

Avalanche Energy Rating (Eas) :

320 mJ

Rds On (Max) @ Id, Vgs :

8m Ω @ 14A, 10V

Width :

3.9878mm

Number of Pins :

8

Voltage - Rated DC :

30V

Turn On Delay Time :

16 ns

Power Dissipation-Max :

2.5W Ta

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

6.5 ns

JESD-609 Code :

e3

Drain to Source Breakdown Voltage :

30V

Gate to Source Voltage (Vgs) :

12V

Lead Free :

Contains Lead, Lead Free

Continuous Drain Current (ID) :

14A

Length :

4.9784mm

Number of Terminations :

8

Nominal Vgs :

2 V

Mount :

Surface Mount

Terminal Finish :

Matte Tin (Sn)

Power Dissipation :

2.5W

Rise Time :

16ns

Radiation Hardening :

No

Vgs (Max) :

±12V

RoHS Status :

ROHS3 Compliant

Element Configuration :

Single

Drive Voltage (Max Rds On,Min Rds On) :

2.7V 10V

Height :

1.4986mm

Input Capacitance (Ciss) (Max) @ Vds :

3150pF @ 15V

Terminal Position :

Dual

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Resistance :

8mOhm

Vgs(th) (Max) @ Id :

2V @ 250μA

Current - Continuous Drain (Id) @ 25°C :

14A Ta

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

51nC @ 4.5V

Operating Mode :

ENHANCEMENT MODE

Turn-Off Delay Time :

28 ns

Terminal Form :

Gull wing

Current Rating :

14A

FET Type :

N-Channel

Threshold Voltage :

2V

Series :

HEXFET®

Factory Lead Time :

12 Weeks