IRF7463

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

51nC @ 4.5V

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

2V @ 250μA

Transistor Application :

SWITCHING

Packaging :

Tube

Vgs (Max) :

±12V

ECCN Code :

EAR99

Pulsed Drain Current-Max (IDM) :

110A

Avalanche Energy Rating (Eas) :

320 mJ

Published :

2003

Terminal Form :

Gull wing

Drain-source On Resistance-Max :

0.008Ohm

Current - Continuous Drain (Id) @ 25°C :

14A Ta

Operating Temperature :

-55°C~150°C TJ

Terminal Finish :

Matte Tin (Sn)

Configuration :

SINGLE WITH BUILT-IN DIODE

Qualification Status :

Not Qualified

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Dual

Surface Mount :

yes

DS Breakdown Voltage-Min :

30V

Transistor Element Material :

SILICON

FET Type :

N-Channel

Drain Current-Max (Abs) (ID) :

14A

Series :

HEXFET®

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e3

Rds On (Max) @ Id, Vgs :

8m Ω @ 14A, 10V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Drive Voltage (Max Rds On,Min Rds On) :

2.7V 10V

Drain to Source Voltage (Vdss) :

30V

HTS Code :

8541.29.00.95

Peak Reflow Temperature (Cel) :

260

Number of Elements :

1

RoHS Status :

Non-RoHS Compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-30 Code :

R-PDSO-G8

Number of Terminations :

8

Input Capacitance (Ciss) (Max) @ Vds :

3150pF @ 15V

Power Dissipation-Max :

2.5W Ta