IRF7459TRPBF
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- Mfr.Part #
- IRF7459TRPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 20V 12A 8SO
- Stock
- 3,469
- In Stock ：
- 3,469
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Packaging :
- Tape and Reel (TR)
- Lead Free :
- Lead Free
- RoHS Status :
- RoHS Compliant
- Number of Pins :
- 8
- Rds On Max :
- 9 mΩ
- Resistance :
- 9mOhm
- Rds On (Max) @ Id, Vgs :
- 9mOhm @ 12A, 10V
- Gate to Source Voltage (Vgs) :
- 12V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Threshold Voltage :
- 2V
- FET Type :
- N-Channel
- Continuous Drain Current (ID) :
- 12A
- Drain to Source Resistance :
- 11mOhm
- Power Dissipation :
- 2.5W
- Mount :
- Surface Mount
- Input Capacitance (Ciss) (Max) @ Vds :
- 2480pF @ 10V
- Drain to Source Breakdown Voltage :
- 20V
- Min Operating Temperature :
- -55°C
- Termination :
- SMD/SMT
- Number of Elements :
- 1
- Current - Continuous Drain (Id) @ 25°C :
- 12A Ta
- Drain to Source Voltage (Vdss) :
- 20V
- Operating Temperature :
- -55°C~150°C TJ
- Vgs (Max) :
- ±12V
- Mounting Type :
- Surface Mount
- Gate Charge (Qg) (Max) @ Vgs :
- 35nC @ 4.5V
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.8V 10V
- Supplier Device Package :
- 8-SO
- Max Operating Temperature :
- 150°C
- Series :
- HEXFET®
- Power Dissipation-Max :
- 2.5W Ta
- Published :
- 2006
- Input Capacitance :
- 2.48nF
- REACH SVHC :
- No SVHC
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Dual Supply Voltage :
- 20V
- Datasheets
- IRF7459TRPBF
N-Channel Tape & Reel (TR) 9mOhm @ 12A, 10V ±12V 2480pF @ 10V 35nC @ 4.5V 20V 8-SOIC (0.154, 3.90mm Width)
IRF7459TRPBF Overview
A device's maximum input capacitance is 2480pF @ 10V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 12A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=20V, and this device has a drain-to-source breakdown voltage of 20V voltage.The Drain-to-Source Resistance (DTS) of a MOSFET is 11mOhm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 12V.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of 2V.To operate this transistor, you need to apply a 20V drain to source voltage (Vdss).This device uses no drive voltage (2.8V 10V) to reduce its overall power consumption.
IRF7459TRPBF Features
a continuous drain current (ID) of 12A
a drain-to-source breakdown voltage of 20V voltage
single MOSFETs transistor is 11mOhm
a threshold voltage of 2V
a 20V drain to source voltage (Vdss)
IRF7459TRPBF Applications
There are a lot of Infineon Technologies
IRF7459TRPBF applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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