IRF7459PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

2.5W Ta

Input Capacitance (Ciss) (Max) @ Vds :

2480pF @ 10V

RoHS Status :

RoHS Compliant

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Drain to Source Voltage (Vdss) :

20V

Series :

HEXFET®

Drain to Source Resistance :

11mOhm

Drain to Source Breakdown Voltage :

20V

Threshold Voltage :

2V

Min Operating Temperature :

-55°C

Turn-Off Delay Time :

20 ns

Vgs(th) (Max) @ Id :

2V @ 250μA

Turn On Delay Time :

10 ns

Nominal Vgs :

2 V

Power Dissipation :

2.5W

Rise Time :

4.5ns

Published :

2006

Width :

4mm

Length :

5mm

Current - Continuous Drain (Id) @ 25°C :

12A Ta

Drive Voltage (Max Rds On,Min Rds On) :

2.8V 10V

Rds On Max :

9 mΩ

Mount :

Surface Mount

Continuous Drain Current (ID) :

12A

FET Type :

N-Channel

Mounting Type :

Surface Mount

Height :

1.5mm

Rds On (Max) @ Id, Vgs :

9mOhm @ 12A, 10V

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Operating Temperature :

150°C

Dual Supply Voltage :

20V

Fall Time (Typ) :

5 ns

Vgs (Max) :

±12V

Supplier Device Package :

8-SO

Number of Pins :

8

Gate Charge (Qg) (Max) @ Vgs :

35nC @ 4.5V

Radiation Hardening :

No

Operating Temperature :

-55°C~150°C TJ

REACH SVHC :

No SVHC

Packaging :

Tube

Input Capacitance :

2.48nF

Gate to Source Voltage (Vgs) :

12V