IRF7458TR

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Avalanche Energy Rating (Eas) :

280 mJ

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

2410pF @ 15V

Pulsed Drain Current-Max (IDM) :

110A

Operating Temperature :

-55°C~150°C TJ

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.008Ohm

Gate Charge (Qg) (Max) @ Vgs :

59nC @ 10V

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

10V 16V

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

4V @ 250µA

Package / Case :

8-SOIC (0.154, 3.90mm Width)

RoHS Status :

Non-RoHS Compliant

JESD-30 Code :

R-PDSO-G8

Drain Current-Max (Abs) (ID) :

14A

Surface Mount :

yes

Packaging :

Tape and Reel (TR)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Series :

HEXFET®

Terminal Finish :

Matte Tin (Sn)

Rds On (Max) @ Id, Vgs :

8m Ω @ 14A, 16V

Terminal Form :

Gull wing

Additional Feature :

AVALANCHE RATED

Qualification Status :

Not Qualified

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power Dissipation-Max :

2.5W Ta

FET Type :

N-Channel

JEDEC-95 Code :

MS-012AA

Drain to Source Voltage (Vdss) :

30V

Number of Terminations :

8

Vgs (Max) :

±30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

SINGLE WITH BUILT-IN DIODE

Current - Continuous Drain (Id) @ 25°C :

14A Ta

JESD-609 Code :

e3

Terminal Position :

Dual

DS Breakdown Voltage-Min :

30V

Mounting Type :

Surface Mount

Number of Elements :

1