IRF7458PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

8

Vgs(th) (Max) @ Id :

4V @ 250µA

Time@Peak Reflow Temperature-Max (s) :

30

JEDEC-95 Code :

MS-012AA

Mounting Type :

Surface Mount

Avalanche Energy Rating (Eas) :

280 mJ

Transistor Element Material :

SILICON

Qualification Status :

Not Qualified

Published :

2004

Surface Mount :

yes

Additional Feature :

AVALANCHE RATED

Operating Mode :

ENHANCEMENT MODE

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Peak Reflow Temperature (Cel) :

260

Gate Charge (Qg) (Max) @ Vgs :

59nC @ 10V

Number of Elements :

1

Packaging :

Tube

Drain-source On Resistance-Max :

0.008Ohm

DS Breakdown Voltage-Min :

30V

Terminal Finish :

Matte Tin (Sn)

Terminal Position :

Dual

FET Type :

N-Channel

Power Dissipation-Max :

2.5W Ta

Series :

HEXFET®

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

10V 16V

Drain Current-Max (Abs) (ID) :

14A

JESD-609 Code :

e3

Drain to Source Voltage (Vdss) :

30V

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

2410pF @ 15V

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-30 Code :

R-PDSO-G8

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

8m Ω @ 14A, 16V

Terminal Form :

Gull wing

Vgs (Max) :

±30V

Pulsed Drain Current-Max (IDM) :

110A

Current - Continuous Drain (Id) @ 25°C :

14A Ta