IRF7456TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~150°C TJ

Recovery Time :

72 ns

Nominal Vgs :

2 V

Rise Time :

25ns

Rds On (Max) @ Id, Vgs :

6.5m Ω @ 16A, 10V

Width :

3.9878mm

Series :

HEXFET®

Element Configuration :

Single

Turn On Delay Time :

20 ns

Number of Terminations :

8

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Radiation Hardening :

No

Current Rating :

16A

Power Dissipation :

2.5W

Number of Elements :

1

Transistor Application :

SWITCHING

Avalanche Energy Rating (Eas) :

250 mJ

Number of Pins :

8

Terminal Position :

Dual

Additional Feature :

AVALANCHE RATED

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

62nC @ 5V

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

3640pF @ 15V

Published :

2008

Packaging :

Tape and Reel (TR)

Length :

4.9784mm

Vgs (Max) :

±12V

FET Type :

N-Channel

Height :

1.4986mm

Threshold Voltage :

2V

Dual Supply Voltage :

20V

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

2.8V 10V

Voltage - Rated DC :

20V

Resistance :

6.5mOhm

Factory Lead Time :

12 Weeks

Lead Free :

Lead Free

Continuous Drain Current (ID) :

16A

Vgs(th) (Max) @ Id :

2V @ 250μA

Gate to Source Voltage (Vgs) :

12V

ECCN Code :

EAR99

Fall Time (Typ) :

52 ns

Turn-Off Delay Time :

50 ns

Current - Continuous Drain (Id) @ 25°C :

16A Ta

Power Dissipation-Max :

2.5W Ta

Contact Plating :

Tin

REACH SVHC :

No SVHC

Terminal Form :

Gull wing

Drain to Source Breakdown Voltage :

20V

Mount :

Surface Mount