IRF7456PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

6.5m Ω @ 16A, 10V

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~150°C TJ

DS Breakdown Voltage-Min :

20V

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs(th) (Max) @ Id :

2V @ 250μA

Avalanche Energy Rating (Eas) :

250 mJ

Vgs (Max) :

±12V

Power Dissipation-Max :

2.5W Ta

Pulsed Drain Current-Max (IDM) :

130A

ECCN Code :

EAR99

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

RoHS Status :

ROHS3 Compliant

FET Type :

N-Channel

Drain-source On Resistance-Max :

0.0065ohm

Input Capacitance (Ciss) (Max) @ Vds :

3640pF @ 15V

Terminal Position :

Dual

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

2.8V 10V

Surface Mount :

yes

Terminal Form :

Gull wing

JESD-30 Code :

R-PDSO-G8

Gate Charge (Qg) (Max) @ Vgs :

62nC @ 5V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

8

Packaging :

Tube

Additional Feature :

ULTRA LOW RESISTANCE

JEDEC-95 Code :

MS-012AA

Drain to Source Voltage (Vdss) :

20V

Drain Current-Max (Abs) (ID) :

16A

Published :

2004

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

16A Ta

Series :

HEXFET®