IRF7456PBF

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Surface Mount

Published :

2004

JESD-30 Code :

R-PDSO-G8

Drain-source On Resistance-Max :

0.0065ohm

Avalanche Energy Rating (Eas) :

250 mJ

Power Dissipation-Max :

2.5W Ta

Input Capacitance (Ciss) (Max) @ Vds :

3640pF @ 15V

Packaging :

Tube

Package / Case :

8-SOIC (0.154, 3.90mm Width)

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Additional Feature :

ULTRA LOW RESISTANCE

Series :

HEXFET®

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Position :

Dual

Transistor Application :

SWITCHING

Terminal Form :

Gull wing

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs(th) (Max) @ Id :

2V @ 250μA

Rds On (Max) @ Id, Vgs :

6.5m Ω @ 16A, 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

FET Type :

N-Channel

Surface Mount :

yes

Gate Charge (Qg) (Max) @ Vgs :

62nC @ 5V

DS Breakdown Voltage-Min :

20V

Current - Continuous Drain (Id) @ 25°C :

16A Ta

Drain Current-Max (Abs) (ID) :

16A

Vgs (Max) :

±12V

Drive Voltage (Max Rds On,Min Rds On) :

2.8V 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JEDEC-95 Code :

MS-012AA

Drain to Source Voltage (Vdss) :

20V

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

8

Pulsed Drain Current-Max (IDM) :

130A

Number of Elements :

1

Operating Temperature :

-55°C~150°C TJ