IRF7455TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Dual Supply Voltage :

30V

Number of Terminations :

8

Drain to Source Breakdown Voltage :

30V

Series :

HEXFET®

Operating Mode :

ENHANCEMENT MODE

Rise Time :

18ns

Terminal Position :

Dual

REACH SVHC :

No SVHC

Additional Feature :

AVALANCHE RATED

Number of Pins :

8

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Voltage - Rated DC :

30V

Power Dissipation :

2.5W

Recovery Time :

96 ns

Power Dissipation-Max :

2.5W Ta

Current Rating :

15A

Vgs(th) (Max) @ Id :

2V @ 250μA

Height :

1.75mm

Gate to Source Voltage (Vgs) :

12V

Terminal Form :

Gull wing

Element Configuration :

Single

Radiation Hardening :

No

Threshold Voltage :

2V

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

56nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds :

3480pF @ 25V

Packaging :

Tape and Reel (TR)

Nominal Vgs :

2 V

Max Junction Temperature (Tj) :

150°C

Rds On (Max) @ Id, Vgs :

7.5m Ω @ 15A, 10V

Current - Continuous Drain (Id) @ 25°C :

15A Ta

Turn On Delay Time :

17 ns

Turn-Off Delay Time :

51 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Lead Free :

Contains Lead, Lead Free

Resistance :

7.5mOhm

Vgs (Max) :

±12V

Factory Lead Time :

12 Weeks

Fall Time (Typ) :

44 ns

Drive Voltage (Max Rds On,Min Rds On) :

2.8V 10V

Continuous Drain Current (ID) :

15A

Breakdown Voltage :

30V

Avalanche Energy Rating (Eas) :

200 mJ

Width :

3.9878mm

Number of Channels :

1

Mounting Type :

Surface Mount

Length :

4.9784mm

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Published :

2004

FET Type :

N-Channel

Mount :

Surface Mount