IRF7455TRPBF-1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

HEXFET®

Package :

Tape and Reel (TR)

Number of Terminals :

8

Vgs(th) (Max) @ Id :

2V @ 250μA

Surface Mount :

yes

Polarity/Channel Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C ~ 150°C (TJ)

Drive Voltage (Max Rds On, Min Rds On) :

2.8V, 10V

Input Capacitance (Ciss) (Max) @ Vds :

3480 pF @ 25 V

Supplier Device Package :

8-SOIC

Power Dissipation-Max (Abs) :

2.5 W

Drain Current-Max (Abs) (ID) :

15 A

Subcategory :

FET General Purpose Power

Product Status :

Obsolete

Drain-source On Resistance-Max :

0.0075 Ω

JESD-30 Code :

R-PDSO-G8

Transistor Application :

SWITCHING

FET Feature :

-

JEDEC-95 Code :

MS-012AA

Technology :

MOSFET (Metal Oxide)

Power Dissipation (Max) :

2.5W (Ta)

Pulsed Drain Current-Max (IDM) :

120 A

FET Type :

N-Channel

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain to Source Voltage (Vdss) :

30 V

Terminal Form :

Gull wing

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Vgs (Max) :

±12V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

DS Breakdown Voltage-Min :

30 V

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

56 nC @ 5 V

Rds On (Max) @ Id, Vgs :

7.5mOhm @ 15A, 10V

Terminal Position :

Dual

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Package Shape :

RECTANGULAR

Avalanche Energy Rating (Eas) :

200 mJ

Current - Continuous Drain (Id) @ 25°C :

15A (Ta)

Reach Compliance Code :

Compliant

Manufacturer :

Infineon Technologies AG

Transistor Element Material :

SILICON