IRF7455

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain Current-Max (Abs) (ID) :

15A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Avalanche Energy Rating (Eas) :

200 mJ

Drain-source On Resistance-Max :

0.0075Ohm

RoHS Status :

Non-RoHS Compliant

JESD-609 Code :

e3

Power Dissipation-Max :

2.5W Ta

Series :

HEXFET®

Qualification Status :

Not Qualified

Number of Elements :

1

Mounting Type :

Surface Mount

Configuration :

SINGLE WITH BUILT-IN DIODE

FET Type :

N-Channel

Peak Reflow Temperature (Cel) :

260

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±12V

Rds On (Max) @ Id, Vgs :

7.5m Ω @ 15A, 10V

Terminal Finish :

Matte Tin (Sn)

Transistor Element Material :

SILICON

JESD-30 Code :

R-PDSO-G8

Surface Mount :

yes

Transistor Application :

SWITCHING

Published :

2004

Number of Terminations :

8

JEDEC-95 Code :

MS-012AA

Drain to Source Voltage (Vdss) :

30V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Input Capacitance (Ciss) (Max) @ Vds :

3480pF @ 25V

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

2V @ 250μA

Pulsed Drain Current-Max (IDM) :

120A

Current - Continuous Drain (Id) @ 25°C :

15A Ta

Operating Temperature :

-55°C~150°C TJ

Terminal Form :

Gull wing

Gate Charge (Qg) (Max) @ Vgs :

56nC @ 5V

Terminal Position :

Dual

DS Breakdown Voltage-Min :

30V

Additional Feature :

AVALANCHE RATED

Drive Voltage (Max Rds On,Min Rds On) :

2.8V 10V

Packaging :

Tube

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED