IRF7453PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

2.2A Ta

Lead Free :

Lead Free

Current Rating :

2.2A

Input Capacitance :

930pF

Dual Supply Voltage :

250V

Power Dissipation-Max :

2.5W Ta

Packaging :

Tube

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rds On (Max) @ Id, Vgs :

230mOhm @ 1.3A, 10V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

930pF @ 25V

Vgs (Max) :

±30V

Series :

HEXFET®

Power Dissipation :

2.5W

Gate to Source Voltage (Vgs) :

30V

Mounting Type :

Surface Mount

Max Operating Temperature :

150°C

Termination :

SMD/SMT

Nominal Vgs :

5.5 V

Rds On Max :

230 mΩ

Voltage - Rated DC :

250V

Rise Time :

2.5ns

Published :

2004

Vgs(th) (Max) @ Id :

5.5V @ 250µA

Supplier Device Package :

8-SO

Continuous Drain Current (ID) :

2.2A

Gate Charge (Qg) (Max) @ Vgs :

38nC @ 10V

Min Operating Temperature :

-55°C

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

8

RoHS Status :

RoHS Compliant

REACH SVHC :

No SVHC

Operating Temperature :

-55°C~150°C TJ

Drain to Source Voltage (Vdss) :

250V

Mount :

Surface Mount

Drain to Source Breakdown Voltage :

250V