IRF7452TRPBF

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Mfr.Part #
IRF7452TRPBF
Manufacturer
Infineon Technologies
Package / Case
8-SOIC (0.154, 3.90mm Width)
Datasheet
Download
Description
MOSFET N-CH 100V 4.5A 8SO
Stock
6,931
In Stock :
6,931

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C :
4.5A Ta
Fall Time (Typ) :
13 ns
Number of Pins :
8
Terminal Form :
Gull wing
Length :
4.9784mm
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
ECCN Code :
EAR99
Factory Lead Time :
14 Weeks
Radiation Hardening :
No
Vgs(th) (Max) @ Id :
5.5V @ 250µA
Drain-source On Resistance-Max :
0.06Ohm
FET Type :
N-Channel
Rise Time :
11ns
Continuous Drain Current (ID) :
4.5A
Voltage - Rated DC :
100V
Height :
1.4986mm
Power Dissipation-Max :
2.5W Ta
Series :
HEXFET®
Power Dissipation :
2.5W
Turn On Delay Time :
9.5 ns
Mounting Type :
Surface Mount
Mount :
Surface Mount
Number of Elements :
1
Nominal Vgs :
5.5 V
Number of Terminations :
8
Turn-Off Delay Time :
16 ns
REACH SVHC :
No SVHC
Gate Charge (Qg) (Max) @ Vgs :
50nC @ 10V
Gate to Source Voltage (Vgs) :
30V
Drain to Source Breakdown Voltage :
100V
Terminal Finish :
Matte Tin (Sn)
RoHS Status :
ROHS3 Compliant
Threshold Voltage :
5.5V
Operating Temperature :
-55°C~150°C TJ
Pulsed Drain Current-Max (IDM) :
36A
Avalanche Energy Rating (Eas) :
200 mJ
Lead Free :
Lead Free
Drive Voltage (Max Rds On,Min Rds On) :
10V
Terminal Position :
Dual
Published :
2001
Operating Mode :
ENHANCEMENT MODE
Transistor Application :
SWITCHING
Package / Case :
8-SOIC (0.154, 3.90mm Width)
Packaging :
Tape and Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds :
930pF @ 25V
Width :
3.9878mm
Transistor Element Material :
SILICON
Rds On (Max) @ Id, Vgs :
60m Ω @ 2.7A, 10V
JESD-609 Code :
e3
Vgs (Max) :
±30V
Current Rating :
4.5A
Configuration :
SINGLE WITH BUILT-IN DIODE
Datasheets
IRF7452TRPBF
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies IRF7452TRPBF from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:8, Mounting Type:Surface Mount, Number of Terminations:8, Operating Temperature:-55°C~150°C TJ, Package / Case:8-SOIC (0.154, 3.90mm Width), IRF7452TRPBF pinout, IRF7452TRPBF datasheet PDF, IRF7452TRPBF amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies IRF7452TRPBF ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IRF7452TRPBF


N-Channel Tape & Reel (TR) 60m Ω @ 2.7A, 10V ±30V 930pF @ 25V 50nC @ 10V 8-SOIC (0.154, 3.90mm Width)

IRF7452TRPBF Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 200 mJ.A device's maximum input capacitance is 930pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 4.5A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=100V, and this device has a drain-to-source breakdown voltage of 100V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 16 ns.Its maximum pulsed drain current is 36A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 9.5 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of 5.5V.This device uses no drive voltage (10V) to reduce its overall power consumption.

IRF7452TRPBF Features


the avalanche energy rating (Eas) is 200 mJ
a continuous drain current (ID) of 4.5A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 16 ns
based on its rated peak drain current 36A.
a threshold voltage of 5.5V


IRF7452TRPBF Applications


There are a lot of Infineon Technologies
IRF7452TRPBF applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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