IRF7452QTRPBF
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- Mfr.Part #
- IRF7452QTRPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 4.5A 8-SOIC
- Stock
- 33,078
- In Stock ：
- 33,078
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Input Capacitance :
- 930pF
- Turn On Delay Time :
- 9.5 ns
- RoHS Status :
- RoHS Compliant
- Height :
- 1.4986mm
- Current - Continuous Drain (Id) @ 25°C :
- 4.5A Ta
- Input Capacitance (Ciss) (Max) @ Vds :
- 930pF @ 25V
- Vgs(th) (Max) @ Id :
- 5.5V @ 250µA
- Max Power Dissipation :
- 2.5W
- Turn-Off Delay Time :
- 16 ns
- Min Operating Temperature :
- -55°C
- Gate to Source Voltage (Vgs) :
- 30V
- Packaging :
- Cut Tape (CT)
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Mounting Type :
- Surface Mount
- Rds On (Max) @ Id, Vgs :
- 60mOhm @ 2.7A, 10V
- Width :
- 3.9878mm
- Drain to Source Resistance :
- 60mOhm
- Fall Time (Typ) :
- 13 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 50nC @ 10V
- Series :
- HEXFET®
- Continuous Drain Current (ID) :
- 4.5A
- Power Dissipation :
- 2.5W
- Radiation Hardening :
- No
- Published :
- 2014
- FET Type :
- N-Channel
- Supplier Device Package :
- 8-SO
- Max Operating Temperature :
- 150°C
- Length :
- 4.9784mm
- Drain to Source Voltage (Vdss) :
- 100V
- Mount :
- Surface Mount
- Rds On Max :
- 60 mΩ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rise Time :
- 11ns
- Number of Pins :
- 8
- Datasheets
- IRF7452QTRPBF
N-Channel Cut Tape (CT) 60mOhm @ 2.7A, 10V 930pF @ 25V 50nC @ 10V 100V 8-SOIC (0.154, 3.90mm Width)
IRF7452QTRPBF Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 930pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 4.5A continuous drain current (ID).Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 16 ns.This device has a drain-to-source resistance of 60mOhm when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 9.5 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.For this transistor to work, a voltage 100V is required between drain and source (Vdss).
IRF7452QTRPBF Features
a continuous drain current (ID) of 4.5A
the turn-off delay time is 16 ns
single MOSFETs transistor is 60mOhm
a 100V drain to source voltage (Vdss)
IRF7452QTRPBF Applications
There are a lot of Infineon Technologies
IRF7452QTRPBF applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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