IRF7451TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tape and Reel (TR)

Vgs (Max) :

±30V

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

41nC @ 10V

Mount :

Surface Mount

Power Dissipation-Max :

2.5W Ta

Number of Elements :

1

Drain-source On Resistance-Max :

0.09Ohm

Factory Lead Time :

12 Weeks

Width :

3.9878mm

Vgs(th) (Max) @ Id :

5.5V @ 250µA

Current Rating :

3.6A

Drain to Source Breakdown Voltage :

150V

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

30V

Continuous Drain Current (ID) :

3.6A

ECCN Code :

EAR99

Series :

HEXFET®

Radiation Hardening :

No

Published :

2004

Transistor Element Material :

SILICON

Pulsed Drain Current-Max (IDM) :

29A

Lead Free :

Lead Free

Transistor Application :

SWITCHING

Number of Pins :

8

Operating Temperature :

-55°C~150°C TJ

Turn On Delay Time :

10 ns

Length :

4.9784mm

Voltage - Rated DC :

150V

FET Type :

N-Channel

Terminal Position :

Dual

Terminal Form :

Gull wing

Power Dissipation :

2.5W

Fall Time (Typ) :

15 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Input Capacitance (Ciss) (Max) @ Vds :

990pF @ 25V

Turn-Off Delay Time :

17 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

8

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Rise Time :

4.2ns

Configuration :

SINGLE WITH BUILT-IN DIODE

Mounting Type :

Surface Mount

Height :

1.4986mm

Rds On (Max) @ Id, Vgs :

90m Ω @ 2.2A, 10V

Current - Continuous Drain (Id) @ 25°C :

3.6A Ta