IRF7451TR

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-609 Code :

e3

Vgs(th) (Max) @ Id :

5.5V @ 250µA

Input Capacitance (Ciss) (Max) @ Vds :

990pF @ 25V

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Gull wing

Avalanche Energy Rating (Eas) :

210 mJ

Rds On (Max) @ Id, Vgs :

90m Ω @ 2.2A, 10V

Surface Mount :

yes

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

FET Type :

N-Channel

JEDEC-95 Code :

MS-012AA

Vgs (Max) :

±30V

Terminal Finish :

Matte Tin (Sn)

Transistor Element Material :

SILICON

Configuration :

SINGLE WITH BUILT-IN DIODE

Qualification Status :

Not Qualified

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain Current-Max (Abs) (ID) :

3.6A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Terminations :

8

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Terminal Position :

Dual

RoHS Status :

Non-RoHS Compliant

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Power Dissipation-Max :

2.5W Ta

Gate Charge (Qg) (Max) @ Vgs :

41nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

3.6A Ta

Series :

HEXFET®

Operating Temperature :

-55°C~150°C TJ

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

28A

JESD-30 Code :

R-PDSO-G8

DS Breakdown Voltage-Min :

150V

Drain-source On Resistance-Max :

0.09Ohm

Drain to Source Voltage (Vdss) :

150V

Number of Elements :

1