IRF7451PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

30V

Power Dissipation-Max :

2.5W Ta

Height :

1.4986mm

Width :

3.9878mm

Voltage - Rated DC :

150V

Vgs(th) (Max) @ Id :

5.5V @ 250µA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Lead Free :

Lead Free

Turn-Off Delay Time :

17 ns

Power Dissipation :

2.5W

ECCN Code :

EAR99

Max Operating Temperature :

150°C

Terminal Position :

Dual

Gate Charge (Qg) (Max) @ Vgs :

41nC @ 10V

Min Operating Temperature :

-55°C

Mount :

Surface Mount

Rds On (Max) @ Id, Vgs :

90m Ω @ 2.2A, 10V

Vgs (Max) :

±30V

Threshold Voltage :

5.5V

Published :

2004

Dual Supply Voltage :

150V

Current - Continuous Drain (Id) @ 25°C :

3.6A Ta

Number of Elements :

1

Radiation Hardening :

No

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

990pF @ 25V

Drain to Source Breakdown Voltage :

150V

Continuous Drain Current (ID) :

3.6A

Fall Time (Typ) :

15 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Type :

N-Channel

Length :

4.9784mm

Termination :

SMD/SMT

Drain-source On Resistance-Max :

0.09Ohm

Packaging :

Tube

Series :

HEXFET®

Pulsed Drain Current-Max (IDM) :

29A

Current Rating :

3.6A

Rise Time :

4.2ns

REACH SVHC :

No SVHC

RoHS Status :

RoHS Compliant

Turn On Delay Time :

10 ns

Transistor Application :

SWITCHING

Nominal Vgs :

5.5 V

Number of Pins :

8

Terminal Form :

Gull wing

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Terminations :

8