IRF7451

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

245

Drain-source On Resistance-Max :

0.09Ohm

Series :

HEXFET®

Power Dissipation-Max :

2.5W Ta

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

8

JEDEC-95 Code :

MS-012AA

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Published :

2004

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

41nC @ 10V

Mounting Type :

Surface Mount

Terminal Position :

Dual

Pulsed Drain Current-Max (IDM) :

28A

Terminal Form :

Gull wing

Surface Mount :

yes

Packaging :

Tube

Qualification Status :

Not Qualified

Package / Case :

8-SOIC (0.154, 3.90mm Width)

RoHS Status :

Non-RoHS Compliant

Avalanche Energy Rating (Eas) :

210 mJ

Vgs(th) (Max) @ Id :

5.5V @ 250µA

Current - Continuous Drain (Id) @ 25°C :

3.6A Ta

Vgs (Max) :

±30V

DS Breakdown Voltage-Min :

150V

Drain Current-Max (Abs) (ID) :

3.6A

JESD-30 Code :

R-PDSO-G8

Input Capacitance (Ciss) (Max) @ Vds :

990pF @ 25V

Time@Peak Reflow Temperature-Max (s) :

30

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

90m Ω @ 2.2A, 10V

Terminal Finish :

TIN LEAD

Drain to Source Voltage (Vdss) :

150V

JESD-609 Code :

e0

HTS Code :

8541.29.00.95

Transistor Application :

SWITCHING

Configuration :

SINGLE WITH BUILT-IN DIODE

FET Type :

N-Channel

Operating Temperature :

-55°C~150°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

10V