IRF7450TR

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

ECCN Code :

EAR99

Mounting Type :

Surface Mount

Drain to Source Voltage (Vdss) :

200V

JESD-609 Code :

e3

Pulsed Drain Current-Max (IDM) :

20A

Rds On (Max) @ Id, Vgs :

170m Ω @ 1.5A, 10V

Qualification Status :

Not Qualified

Avalanche Energy Rating (Eas) :

230 mJ

Power Dissipation-Max :

2.5W Ta

Surface Mount :

yes

Terminal Position :

Dual

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

10V

Current - Continuous Drain (Id) @ 25°C :

2.5A Ta

Number of Elements :

1

Series :

HEXFET®

Drain Current-Max (Abs) (ID) :

2.5A

Additional Feature :

AVALANCHE RATED

RoHS Status :

Non-RoHS Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Number of Terminations :

8

Drain-source On Resistance-Max :

0.17Ohm

JEDEC-95 Code :

MS-012AA

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

940pF @ 25V

Configuration :

SINGLE WITH BUILT-IN DIODE

FET Type :

N-Channel

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

39nC @ 10V

Vgs (Max) :

±30V

Terminal Finish :

Matte Tin (Sn)

JESD-30 Code :

R-PDSO-G8

Vgs(th) (Max) @ Id :

5.5V @ 250µA

Terminal Form :

Gull wing

DS Breakdown Voltage-Min :

200V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Published :

2001