IRF7450

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

HTS Code :

8541.29.00.95

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

940pF @ 25V

Gate Charge (Qg) (Max) @ Vgs :

39nC @ 10V

Surface Mount :

yes

DS Breakdown Voltage-Min :

200V

Avalanche Energy Rating (Eas) :

230 mJ

Operating Mode :

ENHANCEMENT MODE

Pulsed Drain Current-Max (IDM) :

20A

Drain Current-Max (Abs) (ID) :

2.5A

Mounting Type :

Surface Mount

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

5.5V @ 250µA

RoHS Status :

Non-RoHS Compliant

Packaging :

Tube

Qualification Status :

Not Qualified

Peak Reflow Temperature (Cel) :

245

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Vgs (Max) :

±30V

Terminal Form :

Gull wing

Series :

HEXFET®

Time@Peak Reflow Temperature-Max (s) :

30

Current - Continuous Drain (Id) @ 25°C :

2.5A Ta

JESD-30 Code :

R-PDSO-G8

JEDEC-95 Code :

MS-012AA

Drain to Source Voltage (Vdss) :

200V

Terminal Finish :

TIN LEAD

Number of Terminations :

8

Additional Feature :

AVALANCHE RATED

Published :

2001

Transistor Element Material :

SILICON

Power Dissipation-Max :

2.5W Ta

Drain-source On Resistance-Max :

0.17Ohm

Terminal Position :

Dual

JESD-609 Code :

e0

Number of Elements :

1

Configuration :

SINGLE WITH BUILT-IN DIODE

Rds On (Max) @ Id, Vgs :

170m Ω @ 1.5A, 10V

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

10V

ECCN Code :

EAR99

Operating Temperature :

-55°C~150°C TJ